MMBT5551LT1G Introduction to ON Semiconductor

MMBT5551LT1G is an NPN silicon high-voltage transistor produced by ON Semiconductor. The following is a detailed introduction to the product:

1、 Basic parameters
Transistor type: NPN bipolar transistor.
Maximum emitter base voltage (VEBO): 6V.
Maximum DC collector current (Ic): 600mA (may be labeled as 0.6A in some data, the two are equivalent).
Maximum collector emitter voltage (VCEO): 160V.
Maximum collector base voltage (VCBO): Depending on different data, it may be 140V or 180V, but safety margin is usually considered based on 160V as the reference value.
Maximum power dissipation (Pd): 225mW (some sources may mention a maximum power dissipation value of 300mW, which may depend on specific packaging or testing conditions).
Maximum collector emitter saturation voltage (VCE (sat)): typically between 0.15V and 0.2V.
DC current gain (hFE): The maximum value can reach 250, and the minimum value is usually 80.
2、 Packaging and Size
Encapsulation type: SOT-23， This is a small surface mount package.
Number of pins: 3 pins.
Dimensions: Length 2.9mm, Width 1.3mm, Height 0.94mm.
3、 Working temperature range
Minimum operating temperature:- 55 ° C.
Maximum operating temperature:+ 150 ° C.
4、 Application Features
High voltage endurance: Suitable for circuits that require high voltage endurance.
Universality: Can be used as a universal NPN transistor and function in various circuits.
Surface mount: Suitable for automated assembly production lines to improve production efficiency.
5、 Other information
Compliant with standards: This product complies with automotive electronics related standards such as PPAP and AEC-Q101, and is suitable for automotive and industrial applications.
Manufacturer part number: Manufacturer part numbers with S or NSV prefix are qualified for automotive use.
6、 Precautions
When using MMBT5551LT1G, it should be ensured that the voltage and current in the circuit do not exceed their maximum rated values to avoid damaging the transistor.
Due to slight differences between different batches or packaged products, specific batch data manuals should be referenced in practical applications.
In summary, MMBT5551LT1G is a stable and widely used NPN silicon high-voltage transistor, suitable for various electronic circuits and automation systems. When selecting and using, please be sure to refer to the manufacturer's data manual and relevant information to ensure correct application.